1Radiation, physics, and measurement -- 1 -- 1.2 Radioactivity -- 2 -- 1.3 Types of radiation -- 3 -- 1.4 Units -- 4 -- 1.5 Measurement of radiation -- 6 -- 1.6 Silicon dosimeters -- 12 -- 2 Radiation environments -- 17 -- 2.1 Space environment -- 17 -- 2.2 Nuclear reactor environment -- 31 -- 2.3 Radiation processing environment -- 34 -- 2.4 Weapons environment -- 35 -- 2.5 Controlled-fusion environment -- 37 -- 2.6 Environment of robots -- 38 -- 2.7 High-energy physics accelerators -- 39 -- 2.8 Terrestrial and man-made environments -- 43 -- 3 Response of materials and devices to radiation -- 61 -- 3.1 Fundamental damage effects -- 61 -- 3.2 Atomic displacement -- 63 -- 3.3 Total ionizing dose (TID) effects in devices -- 85 -- 3.4 'Colorability' of transparent materials -- 91 -- 3.5 Induced radioactivity -- 100 -- 3.6 High dose-rate upsets (transient effects) -- 101 -- 3.7 Transient photocurrents in p-n junctions -- 104 -- 3.8 Single-event phenomena -- 106 -- 3.9 Consequences of long-lived degradation -- 111 -- 3.10 Estimating total ionizing dose (TID) or bulk damage (NIEL) -- 113 -- 3.11 Conclusions--an overall view of device response -- 116 -- 4 Metal-oxide-semiconductor (MOS) devices -- 129 -- 4.2 Historical -- 132 -- 4.3 Charge trapping in MOS devices -- 134 -- 4.4 Physical model for oxide trapped charge build-up -- 138 -- 4.5 MIIS systems: the dual dielectric -- 163 -- 4.6 Time dependence -- 169 -- 4.7 Transient effects -- 180 -- 4.8 Some advanced MOS structures: potential problems -- 183 -- 5 Bipolar transistors and integrated circuits -- 205 -- 5.2 Effects of radiation on device function -- 205 -- 5.3 Bulk damage -- 209 -- 5.4 Surface-linked degradation in gain -- 222 -- 5.5 Long-lived radiation effects in bipolar integrated circuits -- 227 -- 5.6 Enhanced low-dose-rate sensitivity (ELDRS) in junction passivation dielectries -- 236 -- 5.7 Transient effects in bipolar integrated circuits -- 238 -- 6 Diodes, solar cells, and optoelectronics -- 244 -- 6.2 Changes in diode parameters -- 245 -- 6.3 Solar cells -- 248 -- 6.4 Low-power rectifier diodes -- 256 -- 6.5 High-power rectifier diodes -- 258 -- 6.6 Zener diodes -- 258 -- 6.7 Microwave diodes -- 259 -- 6.8 Light-detecting devices -- 259 -- 6.9 Phototransistors -- 267 -- 6.10 Light-emitting diodes (LEDs) and lasers -- 267 -- 6.11 Optocouplers -- 270 -- 6.12 Charge-coupled devices (CCDs) -- 271 -- 6.13 Electro-optic crystals -- 283 -- 6.14 Opto-electronic systems -- 284 -- 6.15 New computational electronics -- 284 -- 6.16 Vacuum devices and extreme environments -- 287 -- 7 Power semiconductors -- 303 -- 7.2 Bipolar power transistors -- 303 -- 7.3 Thyristors (silicon-controlled rectifiers -- 305 -- 7.4 Power MOSFETs -- 306 -- 7.5 Static induction transistor -- 308 -- 7.6 Insulated-Gate Bipolar Transistor (IGBT) -- 308 -- 8 Optical media -- 311 -- 8.2 Window materials and crystals -- 312 -- 8.3 Coatings -- 327 -- 8.4 Light guides -- 327 -- 8.5 Scintillators -- 337 -- 9 Microelectronics, sensors, MEMs, passives, and other components -- 346 -- 9.1 Junction field-effect and heterojunction transistors -- 346 -- 9.2 Transducers -- 350 -- 9.3 Temperature sensors -- 351 -- 9.4 Magnetics -- 351 -- 9.5 Superconductors -- 354 -- 9.6 Mechanical sensors -- 355 -- 9.7 Miscellaneous electronic components -- 356 -- 10 Polymers and other organics -- 365 -- 10.2 Radiolytic reactions -- 366 -- 10.3 Radiation tolerance of polymers and organics according to application -- 368 -- 10.4 Radiation processing -- 373 -- 10.5 Long-lived degradation in polymers -- 374 -- 10.6 Radiation-tolerance of plastics according to technology -- 376 -- 10.7 Radiation-induced conductivity and charging in insulators -- 379 -- 10.8 Space environment -- 381 -- 11 Interaction of radiation with shielding materials -- 386 -- 11.2 Particle radiation transport and range -- 387 -- 11.3 Transport of electrons -- 389 -- 11.4 Transport of protons and other heavy particles -- 394 -- 11.5 Electromagnetic radiation: bremsstrahlung, X- and gamma-rays -- 395 -- 11.6 Radiation attenuation by shielding; deposition of dose in targets -- 407 -- 11.7 Atomic displacement damage versus depth -- 412 -- 11.8 Influence of material type on radiation stopping -- 413 -- 12 Computer methods for particle transport -- 420 -- 12.2 Environment calculations -- 421 -- 12.3 Dose computation -- 422 -- 12.4 Prediction of single-event upsets -- 432 -- 12.5 Earth orbit: SPENVIS dose-depth curves -- 432 -- 12.6 Neutrons, gamma-rays, and X-rays -- 433 -- 13 Radiation testing -- 437 -- 13.2 Radiation sources -- 437 -- 13.3 Cosmic ray upset simulation -- 451 -- 13.4 Dosimetry for radiation testing -- 455 -- 13.5 Test procedures for semiconductor devices -- 457 -- 13.6 Radiation response specifications -- 460 -- 13.7 Engineering materials -- 463 -- 13.8 Time-dependent effects and post-irradiation effects -- 464 -- 14 Radiation-hardening of semiconductor parts -- 474 -- 14.2 Methodology of total-dose hardening -- 474 -- 14.3 Hardening of a process -- 476 -- 14.4 Hardening for total dose by 'layout' -- 481 -- 14.5 Hardening against transient radiation -- 482 -- 14.6 Commercial radiation-hard and radiation-tolerant technologies -- 484 -- 14.7 Hardening of parts other than silicon -- 487 -- 15 Equipment hardening and hardness assurance -- 490 -- 15.2 Elementary rules of hardening -- 490 -- 15.3 Robots, diagnostics and military vehicles in penetrating radiation -- 492 -- 15.4 Equipment in non-penetrating radiation: space, x-rays, and beta rays -- 508 -- 15.5 On-board radiation monitoring -- 515 -- 15.6 Hardness assurance -- 517 -- A Useful general and geophysical data -- B Radiation quantities -- C Useful data on materials used in electronic equipment -- D Bibliography of dosimeter research -- E Dose-depth curves for typical Earth orbits, calculated by ESA's Space Environment Information System (SPENVIS) software -- F Degradation in polymers in ionizing radiation.